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BLF177
HF/VHF power MOS transistor
Rev. 06 -- 24 January 2007 Product data sheet
IMPORTANT NOTICE
Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact details. In data sheets where the previous Philips references remain, please use the new links as shown below. http://www.philips.semiconductors.com use http://www.nxp.com http://www.semiconductors.philips.com use http://www.nxp.com (Internet) sales.addresses@www.semiconductors.philips.com use salesaddresses@nxp.com (email) The copyright notice at the bottom of each page (or elsewhere in the document, depending on the version) - (c) Koninklijke Philips Electronics N.V. (year). All rights reserved is replaced with: - (c) NXP B.V. (year). All rights reserved. If you have any questions related to the data sheet, please contact our nearest sales office via e-mail or phone (details via salesaddresses@nxp.com). Thank you for your cooperation and understanding, NXP Semiconductors
NXP Semiconductors
Product specification
HF/VHF power MOS transistor
FEATURES * High power gain * Low intermodulation distortion * Easy power control * Good thermal stability * Withstands full load mismatch. APPLICATIONS * Designed for industrial and military applications in the HF/VHF frequency range. DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS transistor encapsulated in a 4-lead, SOT121B flanged package, with a ceramic cap. All leads are isolated from the flange. A marking code, showing gate-source voltage (VGS) information is provided for matched pair applications. Refer to the handbook 'General' section for further information. PINNING PIN 1 2 3 4 drain source gate source DESCRIPTION
1 2
MLA876
BLF177
PIN CONFIGURATION
andbook, halfpage 4
3
d g
MBB072
s
Fig.1 Simplified outline (SOT121B) and symbol.
CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A, and SNW-FQ-302B.
WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste.
QUICK REFERENCE DATA RF performance at Th = 25 C in a common source test circuit. MODE OF OPERATION SSB class-AB CW class-B f (MHz) 28 108 VDS (V) 50 50 PL (W) 150 (PEP) 150 Gp (dB) >20 typ. 19 D (%) >35 typ. 70 d3 (dB) <-30 - d5 (dB) <-30 -
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NXP Semiconductors
Product specification
HF/VHF power MOS transistor
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VDS VGS ID Ptot Tstg Tj PARAMETER drain-source voltage gate-source voltage drain current (DC) total power dissipation storage temperature junction temperature Tmb 25 C CONDITIONS - - - - -65 - MIN.
BLF177
MAX. 125 20 16 220 +150 200 V V A W
UNIT
C C
THERMAL CHARACTERISTICS SYMBOL Rth j-mb Rth mb-h PARAMETER thermal resistance from junction to mounting base thermal resistance from mounting base to heatsink VALUE max. 0.8 max. 0.2 UNIT K/W K/W
102 handbook, halfpage ID (A) 10
MRA906
handbook, halfpage
300
MGP089
Ptot (W) 200
(1)
(1)
(2)
(2)
1
100
10-1
1
10
102
VDS (V)
103
0 0 50 100 Th (C) 150
(1) Current in this area may be limited by RDSon. (2) Tmb = 25 C.
(1) Short-time operation during mismatch. (2) Continuous operation.
Fig.2 DC SOAR.
Fig.3 Power derating curves.
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NXP Semiconductors
Product specification
HF/VHF power MOS transistor
CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL V(BR)DSS IDSS IGSS VGSth VGS gfs RDSon IDSX Cis Cos Crs PARAMETER drain-source breakdown voltage drain-source leakage current gate-source leakage current gate-source threshold voltage gate-source voltage difference of matched pairs forward transconductance drain-source on-state resistance on-state drain current input capacitance output capacitance feedback capacitance CONDITIONS ID = 100 mA; VGS = 0 VGS = 0; VDS = 50 V VGS = 20 V; VDS = 0 ID = 50 mA; VDS = 10 V ID = 50 mA; VDS = 10 V ID = 5 A; VDS = 10 V ID = 5 A; VGS = 10 V VGS = 10 V; VDS = 10 V VGS = 0; VDS = 50 V; f = 1 MHz VGS = 0; VDS = 50 V; f = 1 MHz VGS = 0; VDS = 50 V; f = 1 MHz MIN. 125 - - 2 - 4.5 - - - - - TYP. - - - - - 6.2 0.2 25 480 190 14
BLF177
MAX. - 2.5 1 4.5 100 - 0.3 - - - -
UNIT V mA A V mV S A pF pF pF
VGS group indication LIMITS (V) MIN. A B C D E F G H J K L M N 2.0 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3.0 3.1 3.2 MAX. 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3.0 3.1 3.2 3.3 O P Q R S T U V W X Y Z LIMITS (V) MIN. 3.3 3.4 3.5 3.6 3.7 3.8 3.9 4.0 4.1 4.2 4.3 4.4 MAX. 3.4 3.5 3.6 3.7 3.8 3.9 4.0 4.1 4.2 4.3 4.4 4.5
GROUP
GROUP
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NXP Semiconductors
Product specification
HF/VHF power MOS transistor
BLF177
MGP090
handbook, halfpage
0
handbook, halfpage
30
MGP091
T.C.
(mV/K) -1
ID (A) 20
-2
-3 10 -4
-5 10-2
0 10-1 1 ID (A) 10 0 5 10 VGS (V) 15
VDS = 10 V; valid for Th = 25 to 70 C. VDS = 10 V.
Fig.4
Temperature coefficient of gate-source voltage as a function of drain current; typical values.
Fig.5
Drain current as a function of gate-source voltage; typical values.
handbook, halfpage
400
MGP092
handbook, halfpage
1200
MBK408
RDSon (m) 300
C (pF) 800
Cis 200 400 Cos
100 0 50 100 Tj (C) 150
0 0 20 40 VDS (V) 60
ID = 5 A; VGS = 10 V. VGS = 0; f = 1 MHz.
Fig.6
Drain-source on-state resistance as a function of junction temperature; typical values.
Fig.7
Input and output capacitance as functions of drain-source voltage; typical values.
Rev. 06 - 24 January 2007
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NXP Semiconductors
Product specification
HF/VHF power MOS transistor
BLF177
handbook, halfpage
300
MGP093
Crs (pF) 200
100
0 0 10 20 30 40 50 VDS (V)
VGS = 0; f = 1 MHz.
Fig.8
Feedback capacitance as a function of drain-source voltage; typical values.
APPLICATION INFORMATION FOR CLASS-AB OPERATION RF performance in SSB operation in a common source class-AB test circuit (see Fig.13). Th = 25 C; Rth mb-h = 0.2 K/W; ZL = 6.25 + j0 ; f1 = 28.000 MHz; f2 = 28.001 MHz unless otherwise specified. MODE OF OPERATION SSB, class-AB Note 1. Maximum values at drive levels within the specified PEP values for either amplified tone. For the peak envelope power the values should be decreased by 6 dB. Ruggedness in class-AB operation The BLF177 is capable of withstanding a load mismatch corresponding to VSWR = 50 through all phases under the following conditions: f = 28 MHz; VDS = 50 V at rated output power. f (MHz) 28 VDS (V) 50 IDQ (A) 0.7 PL (W) 20 to 150 (PEP) Gp (dB) >20 typ. 35 D (%) >35 typ. 40 d3 (dB) (note 1) <-30 typ. -35 d5 (dB) (note 1) <-30 typ. -38
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NXP Semiconductors
Product specification
HF/VHF power MOS transistor
BLF177
handbook, halfpage
30
MGP096
handbook, halfpage
60
MGP094
Gp (dB) 20
D (%) 40
10
20
0 0 100 PL (W) PEP 200
0 0 100 PL (W) PEP 200
Class-AB operation; VDS = 50 V; IDQ = 0.7 A; RGS = 5 ; f1 = 28.000 MHz; f2 = 28.001 MHz.
Class-AB operation; VDS = 50 V; IDQ = 0.7 A; RGS = 5 ; f1 = 28.000 MHz; f2 = 28.001 MHz.
Fig.9
Power gain as a function of load power; typical values.
Fig.10 Two tone efficiency as a function of load power; typical values.
handbook, halfpage
-20
MGP097
handbook, halfpage
-20
MGP098
d3 (dB) -30
d5 (dB) -30
-40
-40
-50
-50
-60 0 100 PL (W) PEP 200
-60 0 100 PL (W) PEP 200
Class-AB operation; VDS = 50 V; IDQ = 0.7 A; RGS = 5 ; f1 = 28.000 MHz; f2 = 28.001 MHz.
Class-AB operation; VDS = 50 V; IDQ = 0.7 A; RGS = 5 ; f1 = 28.000 MHz; f2 = 28.001 MHz.
Fig.11 Third order intermodulation distortion as a function of load power; typical values.
Fig.12 Fifth order intermodulation distortion as a function of load power; typical values.
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NXP Semiconductors
Product specification
HF/VHF power MOS transistor
BLF177
handbook, full pagewidth
C9 C1 input 50 C2 C4 C3 L1 L2 D.U.T. L3 L6
C12
C14 C15
output 50
C10 C11 R1 R2 C5 C6 R3 R4 L5 +VG +VD C8 R5 C7 L4
C13
MGP095
Fig.13 Test circuit for class-AB operation.
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NXP Semiconductors
Product specification
HF/VHF power MOS transistor
List of components class-AB test circuit (see Fig.13) COMPONENT C1, C4, C13, C14 C2 C3, C11 C5, C6 C7 C8 C9, C10 C12 C15 L1 DESCRIPTION film dielectric trimmer multilayer ceramic chip capacitor (note 1) multilayer ceramic chip capacitor (note 1) multilayer ceramic chip capacitor multilayer ceramic chip capacitor electrolytic capacitor multilayer ceramic chip capacitor (note 1) multilayer ceramic chip capacitor (note 1) multilayer ceramic chip capacitor (note 1) 5 turns enamelled 0.7 mm copper wire stripline (note 2) 7 turns enamelled 1.5 mm copper wire grade 3B Ferroxcube wideband HF choke 5 turns enamelled 2 mm copper wire 170 nH length 11.5 mm; int. dia. 8 mm; leads 2 x 5 mm VALUE 7 to 100 pF 56 pF 62 pF 100 nF 3 x 100 nF 2.2 F, 63 V 20 pF 100 pF 150 pF 133 nH length 4.5 mm; int. dia. 6 mm; leads 2 x 5 mm length 13 x 6 mm length 12.5 mm; int. dia. 8 mm; leads 2 x 5 mm DIMENSIONS
BLF177
CATALOGUE NO. 2222 809 07015
2222 852 47104 2222 852 47104
L2, L3 L4
41.1 236 nH
L5 L6
4312 020 36642
R1, R2 R2 R3 R5 Notes
metal film resistor metal film resistor metal film resistor metal film resistor
10 , 1 W 10 k, 0.4 W 1 M, 0.4 W 10 k, 1 W
1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality. 2. The striplines are on a double copper-clad printed circuit board, with PTFE fibre-glass dielectric (r = 2.2), thickness 1.6 mm (Rogers 5880).
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NXP Semiconductors
Product specification
HF/VHF power MOS transistor
BLF177
handbook, halfpage
10
MGP099
handbook, halfpage
30
MGP100
Zi () 5 ri
Gp (dB) 20
0 xi
10
-5 0 10 20 f (MHz) 30
0 0 10 20 f (MHz) 30
Class-AB operation; VDS = 50 V; IDQ = 0.7 A; PL = 150 W (PEP); RGS = 6.25 ; RL = 6.25 .
Class-AB operation; VDS = 50 V; IDQ = 0.7 A; PL = 150 W (PEP); RGS = 6.25 ; RL = 6.25 .
Fig.14 Input impedance as a function of frequency (series components); typical values.
Fig.15 Power gain as a function of frequency; typical values.
APPLICATION INFORMATION FOR CLASS-B OPERATION RF performance in CW operation in a common source class-B test circuit (see Fig.19). Th = 25 C; Rth mb-h = 0.2 K/W; RGS = 15.8 unless otherwise specified. MODE OF OPERATION CW, class-B f (MHz) 108 VDS (V) 50 IDQ (A) 0.1 PL (W) 150 Gp (dB) typ. 19 D (%) typ. 70
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NXP Semiconductors
Product specification
HF/VHF power MOS transistor
BLF177
handbook, halfpage
30
MGP101
handbook, halfpage
100
MGP102
Gp (dB) 20
D (%)
50
10
0 0 100 PL (W) 200
0 0 100 PL (W) 200
Class-B operation; VDS = 50 V; IDQ = 100 mA; RGS = 15.8 ; f = 108 MHz.
Class-B operation; VDS = 50 V; IDQ = 100 mA; RGS = 15.8 ; f = 108 MHz.
Fig.16 Power gain as a function of load power; typical values.
Fig.17 Two tone efficiency as a function of load power; typical values.
handbook, halfpage
200
MGP103
PL (W)
100
0 0 1 2 3 PIN (W) 4
Class-B operation; VDS = 50 V; IDQ = 100 mA; RGS = 15.8 ; f = 108 MHz.
Fig.18 Load power as a function of input power; typical values.
Rev. 06 - 24 January 2007
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NXP Semiconductors
Product specification
HF/VHF power MOS transistor
BLF177
C17
handbook, full pagewidth
C1 input 50
C3 L1
C4 L2 L3
D.U.T. BLF177
L4
L7
C13 L8
C15
C18
output 50
C14 C2 C5 R1 R2 L5 C9 C10
C16
C6 C7
C11
R6
C12
L6 R3 C8 R5 R4 C19
MGP104
+VD
Fig.19 Test circuit for class-B operation at 108 MHz.
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NXP Semiconductors
Product specification
HF/VHF power MOS transistor
List of components class-B test circuit (see Fig.19) COMPONENT C1, C2, C16, C18 C3 C4, C5 C6, C7, C9, C10 C8 C11 C12 C13, C14 C15 C17 C19 L1 DESCRIPTION film dielectric trimmer multilayer ceramic chip capacitor (note 1) multilayer ceramic chip capacitor (note 1) multilayer ceramic chip capacitor (note 1) multilayer ceramic chip capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor (note 1) multilayer ceramic chip capacitor (note 1) multilayer ceramic chip capacitor (note 1) electrolytic capacitor 3 turns enamelled 0.8 mm copper wire stripline (note 2) stripline (note 2) 6 turns enamelled 1.6 mm copper wire grade 3B Ferroxcube wideband HF choke 1 turn enamelled 1.6 mm copper wire 2 turns enamelled 1.6 mm copper wire metal film resistor metal film resistor cermet potentiometer metal film resistor metal film resistor 16.5 nH 34.4 nH int. dia. 9 mm; leads 2 x 5 mm length 3.9 mm; int. dia. 6 mm; leads 2 x 5 mm VALUE 2.5 to 20 pF 20 pF 62 pF 1 nF 100 nF 10 nF 3 x 100 nF 36 pF 12 pF 5.6 pF 4.4 F, 63 V 22 nH length 5.5 mm; int. dia. 3 mm; leads 2 x 5 mm 31 x 3 mm 10 x 6 mm length 13.8 mm; int. dia. 6 mm; leads 2 x 5 mm DIMENSIONS
BLF177
CATALOGUE NO. 2222 809 07004
2222 852 47104 2222 852 47103 2222 852 47104
2222 030 28478
L2 L3, L4 L5
64.7 41.1 122 nH
L6 L7 L8
4312 020 36642
R1, R2 R3 R4 R5 R6 Notes
31.6 , 1 W 1 k, 0.4 W 5 k 44.2 k, 0.4 W 10 , 1 W
1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality. 2. The striplines are on a double copper-clad printed circuit board, with PTFE fibre-glass dielectric (r = 2.2), thickness 1.6 mm (Rogers 5880).
Rev. 06 - 24 January 2007
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NXP Semiconductors
Product specification
HF/VHF power MOS transistor
BLF177
handbook, full pagewidth
174
strap
rivet
strap 70
strap
R4
R5 C19 L6 R3 C8 C6 C7 C3 L1 C1 C2 C4 L2 C5 L3 L4 L7 C14 L8 C16 C18 C17 R1 R2 C9 R6 C11 C10 L5 C13 C15 +VD
C12
MGP105
Dimensions in mm. The circuit and components are situated on one side of the PTFE fibre-glass board, the other side being fully metallized to serve as a ground. Earth connections are made by means of hollow rivets, whilst under the source leads and at the input and output copper straps are used for a direct contact between upper and lower sheets.
Fig.20 Component layout for 108 MHz class-B test circuit.
Rev. 06 - 24 January 2007
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NXP Semiconductors
Product specification
HF/VHF power MOS transistor
BLF177
MGP107
MGP108
handbook, halfpage
4
Zi ()
handbook, halfpage
10
ZL ()
2
ri
8 RL
0 xi -2
6 XL 4
-4
2
-6
0 0 100 f (MHz) 200 0 100 f (MHz) 200
Class-B operation; VDS = 50 V; IDQ = 0.1 A; PL = 150 W; RGS = 15 .
Class-B operation; VDS = 50 V; IDQ = 0.1 A; PL = 150 W; RGS = 15 .
Fig.21 Input impedance as a function of frequency (series components); typical values.
Fig.22 Load impedance as a function of frequency (series components); typical values.
handbook, halfpage
30
MGP109
Gp (dB) 20
handbook, halfpage
10
Zi
ZL
MBA379
0 0 100 f (MHz) 200
Class-B operation; VDS = 50 V; IDQ = 0.1 A; PL = 150 W; RGS = 15 .
Fig.23 Definition of transistor impedance.
Fig.24 Power gain as a function of frequency; typical values.
Rev. 06 - 24 January 2007
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NXP Semiconductors
Product specification
HF/VHF power MOS transistor
BLF177 scattering parameters VDS = 50 V; ID = 100 mA; note 1. f (MHz) |s11| 5 10 20 30 40 50 60 70 80 90 100 125 150 175 200 250 300 350 400 450 500 600 700 800 900 1000 Note 0.86 0.83 0.85 0.88 0.90 0.92 0.94 0.96 0.96 0.97 0.97 0.99 0.99 0.99 1.00 1.00 1.00 0.99 1.00 0.99 0.99 0.99 0.99 0.99 0.99 0.98 s11 -110.20 -139.40 -155.70 -161.50 -164.90 -167.10 -169.00 -170.70 -172.20 -173.40 -174.30 -176.50 -178.10 -179.80 179.20 177.00 175.10 173.30 171.80 170.10 168.50 165.40 162.30 158.90 155.30 151.80 |s21| 36.90 20.39 9.82 5.96 3.98 2.83 2.11 1.63 1.29 1.04 0.86 0.57 0.40 0.30 0.23 0.15 0.11 0.08 0.07 0.07 0.07 0.07 0.09 0.10 0.12 0.14 s21 114.20 93.30 72.60 59.30 49.30 41.90 36.00 31.20 27.40 24.20 21.70 16.40 13.40 11.60 11.00 11.70 16.70 24.10 33.10 42.70 51.90 64.20 70.60 73.80 74.90 76.40 |s12| 0.02 0.02 0.02 0.02 0.02 0.01 0.01 0.01 0.00 0.00 0.00 0.01 0.01 0.02 0.02 0.03 0.03 0.04 0.05 0.05 0.06 0.07 0.09 0.10 0.12 0.14 s12 25.20 5.10 -13.40 -24.70 -31.70 -35.80 -36.80 -33.70 -23.00 3.30 42.50 81.60 88.70 90.70 90.80 90.50 89.60 88.30 88.00 87.80 86.50 84.90 83.10 82.20 80.70 79.80 |s22| 0.64 0.55 0.60 0.69 0.76 0.82 0.86 0.89 0.91 0.92 0.94 0.95 0.97 0.98 0.98 0.99 0.99 0.99 0.99 0.99 0.99 0.99 0.98 0.98 0.97 0.97
BLF177
s22 -84.90 -112.00 -129.30 -138.00 -144.30 -149.30 -153.50 -157.00 -159.90 -162.40 -164.50 -168.80 -171.90 -174.50 -176.70 179.80 176.90 174.30 171.90 169.60 167.40 163.10 158.90 154.80 150.60 146.20
1. For more extensive s-parameters see internet website: http://www.semiconductors.philips.com.markets/communications/wirelesscommunicationms/broadcast
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NXP Semiconductors
Product specification
HF/VHF power MOS transistor
PACKAGE OUTLINE
BLF177
Flanged ceramic package; 2 mounting holes; 4 leads
D
SOT121B
A F D1 q U1 C B
H b
c
4
3
w2 M C M A
p
U2
U3
w1 M A M B M
1
H
2
Q
0
5 scale
10 mm
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT mm inches A 7.27 6.17 0.286 0.243 b 5.82 5.56 c 0.16 0.10 D D1 F 2.67 2.41 H 28.45 25.52 p 3.30 3.05 0.130 0.120 Q 4.45 3.91 q 18.42 U1 24.90 24.63 0.98 0.97 U2 6.48 6.22 0.255 0.245 U3 12.32 12.06 0.485 0.475 w1 0.25 0.01 w2 0.51 45 0.175 0.725 0.154 0.02
12.86 12.83 12.59 12.57
0.229 0.006 0.219 0.004
0.506 0.505 0.105 1.120 0.496 0.495 0.095 1.005
OUTLINE VERSION SOT121B
REFERENCES IEC JEDEC EIAJ
EUROPEAN PROJECTION
ISSUE DATE 99-03-29
Rev. 06 - 24 January 2007
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NXP Semiconductors
BLF177
HF/VHF power MOS transistor
Legal information
Data sheet status
Document status[1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet
[1] [2] [3]
Product status[3] Development Qualification Production
Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification.
Please consult the most recently issued document before initiating or completing a design. The term `short data sheet' is explained in section "Definitions". The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com.
Definitions
Draft -- The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet -- A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail.
malfunction of a NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Applications -- Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values -- Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale -- NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license -- Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights.
Disclaimers
General -- Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes -- NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use -- NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or
Trademarks
Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners.
Contact information
For additional information, please visit: http://www.nxp.com For sales office addresses, send an email to: salesaddresses@nxp.com
Rev. 06 - 24 January 2007
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NXP Semiconductors
BLF177
HF/VHF power MOS transistor
Revision history
Revision history Document ID BLF177_N_6 Modifications: Release date 20070124 Data sheet status Product data sheet Change notice Supersedes BLF177_5
* * * *
correction made to figure title of Fig.13 correction made to note 2 on page 9 correction made to note 2 on page 13 correction made to figure note of Fig.20 Product specification Product specification Product specification Product specification BLF177_4 BLF177_3 BLF177_CNV_2 -
BLF177_5 (9397 750 14416) BLF177_4 (9397 750 11579) BLF177_3 (9397 750 04059) BLF177_CNV_2 (9397 750 xxxxx)
20041217 20030721 19980702 19971216
Please be aware that important notices concerning this document and the product(s) described herein, have been included in section `Legal information'.
(c) NXP B.V. 2007.
All rights reserved.
For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 24 January 2007 Document identifier: BLF177_N_6
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